Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Electronics

AlbertoMaria Angelotti¹  Alberto Santarelli¹  Corrado Florian¹  GianPiero Gibiino¹ 

[1] Department of Electrical, Electronic, and Information Engineering (DEI) ’G. Marconi’, University of Bologna, 40136 Bologna, Italy;

关键词: semiconductor device characterization;    gallium nitride;    transient measurements;    pulsed measurements;    charge trapping;    low-frequency dispersive effects;   

DOI  :  10.3390/electronics10020137

来源: DOAJ

【 摘 要 】

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 m) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV , pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

【 授权许可】

Unknown