Graphene Growth Directly on SiO2/Si by Hot Filament Chemical Vapor Deposition

Nanomaterials

Frank Mendoza¹  Sandra Rodríguez-Villanueva²  Ram S. Katiyar²  Alvaro A. Instan²  Gerardo Morell²  Brad R. Weiner² 

[1] Department of Physics, College of Arts and Sciences, Mayagüez Campus, University of Puerto Rico, Mayaguez, PR 00682, USA;Department of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USA;

关键词: graphene;    hot filament chemical vapor deposition;    copper catalytic effect;   

DOI  :  10.3390/nano12010109

来源: DOAJ

【 摘 要 】

We report the first direct synthesis of graphene on SiO₂/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO₂/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO₂/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.

【 授权许可】

Unknown