Journal of Materiomics | |
Ce and W co-doped CaBi2Nb2O9 with enhanced piezoelectric constant and electrical resistivity at high temperature | |
Wen-Qin Luo1  Chen Qin2  Shujun Zhang3  Zhumei Wang3  Yueming Li3  Zong-Yang Shen3  Fusheng Song3  | |
[1] Corresponding author. Energy Storage and Conversion Ceramic Materials Engineering Laboratory of Jiangxi Province, China National Light Industry Key Laboratory of Functional Ceramic Materials, School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China.;Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW, 2500, Australia;Energy Storage and Conversion Ceramic Materials Engineering Laboratory of Jiangxi Province, China National Light Industry Key Laboratory of Functional Ceramic Materials, School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China; | |
关键词: Ultra-high temperature ceramics; Piezoelectric properties; Aurivillius phase; Bismuth layered structure; CaBi2Nb2O9; | |
DOI : | |
来源: DOAJ |
【 摘 要 】
Ce and W co-doped CaBi2Nb2O9 ceramics with chemical formula Ca0.96Ce0.04Bi2Nb2-xWxO9 (CCBN-W100x, x = 0–0.07) are fabricated via conventional solid state sintering method, to investigate the effect of W addition on the structure, electrical resistivity, dielectric and piezoelectric properties. A piezoelectric constant d33 of 13.4 pC/N is obtained in CCBN-W2 ceramics, >100% higher than that of pure CaBi2Nb2O9 (d33 = 5.8–6.4 pC/N). Of particular significance is that the electrical resistivity of CCBN-W2 ceramics (ρ = 3.7 × 109 Ω cm at 500 °C) is three orders of magnitude higher than pure CaBi2Nb2O9 (ρ = 2.9 × 106 Ω cm at same temperature). All these properties, together with its low dielectric loss (tanδ = 0.13%) and excellent d33 thermal stability up to 800 °C, merit the CCBN-W2 ceramics for high temperature piezoelectric sensing applications.
【 授权许可】
Unknown