A Regulated Charge Pump with Extremely Low Output Ripple

Electronics

DavidW. Graham¹  MirMohammad Navidi¹ 

[1] Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA;

关键词: charge pump;    dc–dc converter;    variable-frequency regulation;    floating-gate transistor;    analog nonvolatile memory;   

DOI  :  10.3390/electronics8111293

来源: DOAJ

【 摘 要 】

In this paper, we present a regulated charge pump with extremely low output ripple (<1 mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 $\mathsf{\mu }$ m standard CMOS process. The die area of this charge pump is 0.163 mm ${}^2$ . While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V.

【 授权许可】

Unknown