Performance limits of terahertz zero biased rectifying detectors for direct detection

Semiconductor Physics, Quantum Electronics & Optoelectronics

A.G. Golenkov¹ 

[1] V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine;

关键词: rectifying uncooled terahertz detector;    nep;    fet;    gaaln/gan heterojunction fet;    sbd;   

DOI  :  10.15407/spqeo19.02.129

来源: DOAJ

【 摘 要 】

Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (opt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve opt ~ 23 kV/W and NEPopt ~ 110–12 W/Hz1/2, respectively. At low radiation frequency  in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (hetero-junction FETs) with comparable device impedances.

【 授权许可】

Unknown