Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

Materials

Karol Synoradzki¹  Damian Szymański¹  Kamil Ciesielski¹  Dariusz Kaczorowski¹  Przemysław Skokowski²  Yuri Grin³  Igor Veremchuk³  Horst Borrmann³ 

[1] Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P. O. Box 1410, 50-950 Wrocław, Poland;Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland;Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, 01187 Dresden, Germany;

关键词: Heusler alloys;    thermoelectric;    ScNiSb;   

DOI  :  10.3390/ma12101723

来源: DOAJ

【 摘 要 】

Thermoelectric properties of the half-Heusler phase ScNiSb (space group F $\overline{4}$ 3m) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2−950 K. The material appeared as a p-type conductor, with a fairly large, positive Seebeck coefficient of about 240 μV K⁻¹ near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 μΩm at 350 K), resulting in a rather small magnitude of the power factor (less than 1 × 10⁻³ W m⁻¹ K⁻²) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m⁻¹ K⁻¹ occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures.

【 授权许可】

Unknown