A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

Nanomaterials

Hui Xu¹  Haijun Liu²  Qingjiang Li²  Bing Song²  Sen Liu²  Rongrong Cao³ 

[1] Integrated Technology, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China;College of Electronic Science, National University of Defense Technology, Changsha 410073, China;;Key Laboratory of Microelectronic Devices &

关键词: chalcogenide;    memristor;    resistive random access memory;    dual-layer;    threshold switching selector;   

DOI  :  10.3390/nano9030408

来源: DOAJ

【 摘 要 】

Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>107) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO2 layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO2 due to the grain boundary quantity.

【 授权许可】

Unknown