Unified Analytical Model for SOI LDMOS With Electric Field Modulation

IEEE Journal of the Electron Devices Society

Baoxing Duan¹  Ziming Dong¹  Jingyu Xing²  Yintang Yang² 

[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&x2019;an, China;

关键词: Analytical model;    SOI LDMOS;    electric field modulation effect;    Poisson equation;    surface electric field;   

DOI  :  10.1109/JEDS.2020.3006293

来源: DOAJ

【 摘 要 】

The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation. The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field distribution of the device. Also, the simulation results obtained through the simulation software ISE are consistent with the expected results of the analytical model. This not only proves the feasibility of the electric field modulation theory, but also shows that the accurate analytical model will be of great guiding significance for designing and optimizing the same LDMOS based on SOI structures.

【 授权许可】

Unknown