A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society

Hao Hu¹  Xing Bi Chen¹  Yuan Lin¹  Rongxin Chen¹ 

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

关键词: Carrier store trench bipolar transistor (CSTBT);    on-state voltage;    shielded insulated gate bipolar transistor (SIGBT);    saturation current;   

DOI  :  10.1109/JEDS.2020.3000280

来源: DOAJ

【 摘 要 】

A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on-state voltage (Von), and Von can be designed independently of the breakdown voltage (BV). TCAD simulation indicates that under the same level of BV, compared with the conventional Carrier Store Trench Bipolar Transistor (CSTBT), the Eoff (the turn-off loss) of the proposed SIGBT is 85.6% lower under Von ≈ 1.4 V. Moreover, the saturation current density also decreases by 31.2%.

【 授权许可】

Unknown