Analysis of perovskite oxide etching using argon inductively coupled plasmas for photonics applications

Nanoscale Research Letters

Eric Jun Hao Cheung¹  Yu Cao¹  Aaron J. Danner¹  Guanyu Chen¹  Jisheng Pan² 

[1] Department of Electrical and Computer Engineering, National University of Singapore;Institute of Materials Research and Engineering, A∗STAR (Agency for Science, Technology and Research);

关键词: Perovskite oxide;    Argon;    Inductively coupled plasma etching;    Photonics;   

DOI  :  10.1186/s11671-021-03494-2

来源: DOAJ

【 摘 要 】

Abstract We analyzed the dry etching of perovskite oxides using argon-based inductively coupled plasmas (ICP) for photonics applications. Various chamber conditions and their effects on etching rates have been demonstrated based on Z-cut lithium niobate (LN). The measured results are predictable and repeatable and can be applied to other perovskite oxides, such as X-cut LN and barium titanium oxide (BTO). The surface roughness is better for both etched LN and BTO compared with their as-deposited counterparts as confirmed by atomic force microscopy (AFM). Both the energy-dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) methods have been used for surface chemical component comparisons, qualitative and quantitative, and no obvious surface state changes are observed according to the measured results. An optical waveguide fabricated with the optimized argon-based ICP etching was measured to have -3.7 dB/cm loss near 1550 nm wavelength for Z-cut LN, which validates this kind of method for perovskite oxides etching in photonics applications.

【 授权许可】

Unknown