Highly crystalline ReSe2 atomic layers synthesized by chemical vapor transport

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Xiaoqing Pan¹  Lei Xing²  Guanchen Xu²  Zhixing Lu²  Lina Liu²  Jinghui Wang²  Liying Jiao²  Jingying Zheng²  Peng Wang³  Xingxu Yan³ 

[1] Department of Materials Science and Engineering University of California Irvine California;Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry Tsinghua University Beijing China;National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing China;

关键词: anisotropy;    chemical vapor transport;    field‐effect transistor;    rhenium diselenide;    two‐dimensional;   

DOI  :  10.1002/inf2.12041

来源: DOAJ

【 摘 要 】

Abstract Two‐dimensional (2D) anisotropic rhenium diselenide (ReSe2) has attracted lots of attention due to its promising applications in electronics and optoelectronics. However, controlled synthesis of high quality ultrathin ReSe2 remains as a challenge. Here we developed an approach for synthesizing high quality 2D ReSe2 flakes with a thickness down to monolayer by chemical vapor transport (CVT) through carefully tuning the growth kinetics. The atomic structures and anisotropy of the obtained ReSe2 flakes were intensively characterized with scanning transmission electron microscope and angle‐resolved polarized Raman spectroscopy. Field‐effect transistors fabricated on the CVT‐grown ReSe2 flakes showed n‐type semiconducting behavior with an on/off current ratio of 105 and a mobility up to ∼5 cm2 V−1 s−1, which is comparable to mechanically exfoliated flakes and is obvious higher than the samples synthesized with other approaches. This study not only make high quality 2D ReSe2 easily accessible for both fundamental and application explorations but also sheds new lights on the chemical synthesis of other anisotropic 2D materials.

【 授权许可】

Unknown