Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition

Coatings

Seok Choi¹  ByungJoon Choi¹  Hogyoung Kim² 

[1] Department of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Korea;Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Korea;

关键词: algan/gan;    dislocation-related tunneling;    surface donors;   

DOI  :  10.3390/coatings10020194

来源: DOAJ

【 摘 要 】

Atomic layer deposited AlGaN on GaN substrate with different thicknesses was prepared and the electron transport mechanism of AlGaN/GaN Schottky diodes was investigated. Above 348 K, both 5 and 10 nm thick AlGaN showed that the thermionic emission model with inhomogeneous Schottky barrier could explain the forward current transport. Analysis using a dislocation-related tunneling model showed that the current values for 10 nm thick AlGaN was matched well to the experimental data while those were not matched for 5 nm thick AlGaN. The higher density of surface (and interface) states was found for 5 nm thick AlGaN. In other words, a higher density of surface donors, as well as a thinner AlGaN layer for 5 nm thick AlGaN, enhanced the tunneling current.

【 授权许可】

Unknown