Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

Materials

Gulnar Sugurbekova¹  RajaniK. Vijayaraghavan²  Karsten Fleischer³  Ardak Ainabayev⁴  IgorV. Shvets⁴  David Caffrey⁴  Aitkazy Kaisha⁴  Ainur Zhussupbekova⁴ 

[1] Nazarbayev University, Laboratory of Materials Processing and Applied Physics, Nur-Sultan 010000, Kazakhstan;School of Electronic Engineering, Dublin City University, Glasnevin, Dublin 9, Ireland;School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland;School of Physics, Trinity College, The University of Dublin, Dublin 2, Ireland;

关键词: transparent conducting oxide;    tco;    raman spectroscopy;    amorphous oxide;    oxide electronics;    background subtraction;   

DOI  :  10.3390/ma13020267

来源: DOAJ

【 摘 要 】

The electronic and optical properties of transparent conducting oxides (TCOs) are closely linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic (bond structure) level. With the increasing drive towards using reduced film thicknesses in devices and growing interest in amorphous TCOs such as n-type InGaZnO ${}_4$ (IGZO), ZnSnO ${}_3$ (ZTO), p-type Cu ${}_x$ CrO ${}_2$ , or ZnRh ${}_2$ O ${}_4$ , the task of gaining in-depth knowledge on their crystal structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult. We demonstrate the use of a focal shift based background subtraction technique for Raman spectroscopy specifically developed for the case of transparent thin films on amorphous substrates. Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes in local vibrational modes reflect changes in the composition of the TCO and consequently their electronic properties.

【 授权许可】

Unknown