Copper Nitride Nanowire Arrays—Comparison of Synthetic Approaches

Materials

Edward Szłyk¹  Aleksandra Scigala¹  Marek Wiśniewski¹  Robert Szczesny¹  Marek Trzcinski²  Lukasz Skowronski²  Tomasz Rerek³ 

[1] Faculty of Chemistry, Nicolaus Copernicus University in Toruń, Gagarina 7, 87-100 Toruń, Poland;Institute of Mathematics and Physics, UTP University of Science and Technology, Al. Prof. S. Kaliskiego 7, 85-796 Bydgoszcz, Poland;Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Grudziadzka 5, 87-100 Torun, Poland;

关键词: Cu₃N;    CuO;    nanowires;    thin films;    physical vapor deposition (PVD);    electroplating;   

DOI  :  10.3390/ma14030603

来源: DOAJ

【 摘 要 】

Copper nitride nanowire arrays were synthesized by an ammonolysis reaction of copper oxide precursors grown on copper surfaces in an ammonia solution. The starting Cu films were deposited on a silicon substrate using two different methods: thermal evaporation (30 nm thickness) and electroplating (2 μm thickness). The grown CuO or CuO/Cu(OH)₂ architectures were studied in regard to morphology and size, using electron microscopy methods (SEM, TEM). The final shape and composition of the structures were mostly affected by the concentration of the ammonia solution and time of the immersion. Needle-shaped 2–3 μm long nanostructures were formed from the electrodeposited copper films placed in a 0.033 M NH₃ solution for 48 h, whereas for the copper films obtained by physical vapor deposition (PVD), well-aligned nano-needles were obtained after 3 h. The phase composition of the films was studied by X-ray diffraction (XRD) and selected area electron diffraction (SAED) analysis, indicating a presence of CuO and Cu(OH)₂, as well as Cu residues. Therefore, in order to obtain a pure oxide film, the samples were thermally treated at 120–180 °C, after which the morphology of the structures remained unchanged. In the final stage of this study, Cu₃N nanostructures were obtained by an ammonolysis reaction at 310 °C and studied by SEM, TEM, XRD, and spectroscopic methods. The fabricated PVD-derived coatings were also analyzed using a spectroscopic ellipsometry method, in order to calculate dielectric function, band gap and film thickness.

【 授权许可】

Unknown