Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals

Xiao-Ying Zhang¹  Wen-Zhang Zhu¹  Hai-Jun Lin¹  Chia-Hsun Hsu¹  MingJie Zhao¹  Shui-Yang Lien¹ 

[1] School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China;

关键词: heterojunction;    silicon carbide;    band gap;    solar cell;    crystalline silicon;   

DOI  :  10.3390/cryst9080402

来源: DOAJ

【 摘 要 】

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH₄ gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH₄ flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

【 授权许可】

Unknown