Green Synthesis of Ge1−xSnx Alloy Nanoparticles for Optoelectronic Applications

Crystals

Daniela R. Radu¹  Cheng-Yu Lai¹  Gopal Singh Attar¹  Mimi Liu¹ 

[1] Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, USA;

关键词: germanium-tin alloy;    colloidal synthesis;    nanoparticles;    electronic materials;    semiconductors;   

DOI  :  10.3390/cryst11101216

来源: DOAJ

【 摘 要 】

Compositionally controlled, light-emitting, group IV semiconductor nanomaterials have potential to enable on-chip data communications and infrared (IR) imaging devices compatible with the complementary metal−oxide−semiconductor (CMOS) technology. The recent demonstration of a direct band gap laser in Ge-Sn alloys opens avenues to the expansion of Si-photonics. Ge-Sn alloys showed improved effective carrier mobility as well as direct band gap behavior at Sn composition above 6–11%. In this work, Ge_1−xSn_x alloy nanoparticles with varying Sn compositions from x = 0.124 to 0.178 were prepared via colloidal synthesis using sodium borohydride (NaBH₄), a mild and non-hazardous reducing reagent. Successful removal of the synthesized long-alkyl-chain ligands present on nanoparticles’ surfaces, along with the passivation of the Ge-Sn nanoparticle surface, was achieved using aqueous (NH₄)₂S. The highly reactive surface of the nanoparticles prior to ligand exchange often leads to the formation of germanium oxide (GeO₂). This work demonstrates that the (NH₄)₂S further acts as an etching reagent to remove the oxide layer from the particles’ surfaces. The compositional control and long-term stability will enable the future use of these easily prepared Ge_1−xSn_x nanoalloys in optoelectronic devices.

【 授权许可】

Unknown