Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Nanomaterials

Wei-Ting Wu¹  Sheng-Po Chang¹  Shoou-Jinn Chang²  Ming-Hung Hsu²  Jyun-Yi Li² 

[1] Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;;Institute of Microelectronics &

关键词: indium titanium zinc oxide;    thin film transistor;    oxygen partial pressure;   

DOI  :  10.3390/nano7070156

来源: DOAJ

【 摘 要 】

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.

【 授权许可】

Unknown