Atomic force microscopy data of novel high-k hydrocarbon films synthesized on Si wafers for gate dielectric applications

Data in Brief

Dong-Ok Kim¹  Eui-Tae Kim¹  Jihwan Kwon²  Sangyeob Lee² 

[1] Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea;;Department of Materials Science &

关键词: Hydrocarbon;    High-k dielectrics;    Chemical vapor deposition;    Atomic force microscopy;   

DOI  :  

来源: DOAJ

【 摘 要 】

This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-k hydrocarbon (HC) films. The high-k HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma chemical vapor deposition with CH4 gas and a gas mixture consisting of 10% H2 and 90% Ar. The AFM images were obtained by tapping mode. The AFM results provide the surface topography, roughness, and thickness of the HC films as a function of growth temperature, which are essential data for high-k gate dielectrics of metal-insulator-semiconductor device applications. This data article is related to the article entitled, “Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices” (Kim et al., 2020) [1].

【 授权许可】

Unknown