Effect of Dopants on Epitaxial Growth of Silicon Nanowires

Nanomaterials and Nanotechnology

关键词: Nanowires;    Epitaxial Growth;    Dopant;   

DOI  :  http://dx.doi.org/10.5772/58317

来源: DOAJ

【 摘 要 】

We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical <111> direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical <111> direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.

【 授权许可】

Unknown