Effect of temperature on carrier transport and photoconductivity of Mn-doped FeS2 thin films

Progress in Natural Science: Materials International

Ram K. Sharma¹  Anup Thakur²  Manjot Kaur³  Akshay Kumar³  Jugraj Singh³  Kulwinder Singh³  Ankush Vij⁴ 

[1] Centre for Interdisciplinary Research, University of Petroleum and Energy Studies (UPES), Dehradun, Uttarakhand, 248 007, India;Department of Basic and Applied Sciences, Punjabi University, Patiala, Punjab, 147 002, India;Department of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh, Sahib-Punjab, 140 406, India;Department of Physics, University of Petroleum and Energy Studies (UPES), Dehradun, Uttarakhand, 248 007, India;

关键词: Mn-doped FeS2;    Charge transport;    Hopping mechanism;    Photodetection;    Responsivity;   

DOI  :  

来源: DOAJ

【 摘 要 】

Thin-film of Mn-doped iron disulfide (FeS2) has been prepared using the thermal evaporation method. This work reports the Hall measurements, temperature and light intensity-dependent photoconductivity, electrical transport mechanism, and photodetection properties of Mn-doped FeS2 thin film. The transient photoconductivity measurements of p-type Mn-doped FeS2 thin film show a consistent dependence upon temperature and light intensity. Charge transport mechanism was illustrated using different models. In region-I (303–393 ​K) deposited film followed the thermally activated transport mechanism. Nearest neighbour hopping (NNH) transport mechanism was followed by region-II (274–293 ​K), and Mott's variable range hopping (VRH) mechanism was dominant in region-III (108–273 ​K). The fabricated device resulted in higher photoconductivity due to collecting charge carriers through electrodes under light illumination. The results also revealed that Mn-doped thin film possessed good photoresponsivity (∼19 ​mA/W) as well as photo-detectivity (∼3.4 ​× ​1012 Jones) due to the occupation of localized states formed by Mn-doping. Light intensity-dependent photodetection properties suggested the potential for real-time photodetection applications.

【 授权许可】

Unknown