Applied Sciences | |
Space Charge Effect and Resistance Switching in Doped Monocrystalline Silicones | |
Caixin Feng1  Xin Jin1  Hai Wang1  | |
[1] Department of Physics, Capital Normal University, Beijing 100037, China; | |
关键词: resistance; space charge effect; monocrystalline silicones; | |
DOI : 10.3390/app9030434 | |
来源: DOAJ |
【 摘 要 】
In this work, we report the nonlinear carriers’ transport in n-doped monocrystalline silicone with millimeter-scale length. Ohm, effective trap filling, and Mott⁻Gurney regimes are distinguished from the current⁻voltage (I⁻V) curve. Two critical voltages are identified for the lower and upper limitations of an effective trap-filling regime. Meanwhile, the electrode spacing, temperature, and magnetic field dependence of the two critical voltages are demonstrated experimentally. In particular, we propose that the effective trap-filling process is irreversible under electric field. It is observed that the hysteresis of I⁻V curve initiates from the effective trap-filling regime and extends to the Mott⁻Gurney regime, forming the resistance-switching loop. In addition, the temperature dependence and the magnetic field dependence of the resistance-switching loop are reported. The above observations may shed light on dopants engineering on carrier dynamics in a space charge regime and further advance resistance-switching devices technology.
【 授权许可】
Unknown