Space Charge Effect and Resistance Switching in Doped Monocrystalline Silicones

Applied Sciences

Caixin Feng¹  Xin Jin¹  Hai Wang¹ 

[1] Department of Physics, Capital Normal University, Beijing 100037, China;

关键词: resistance;    space charge effect;    monocrystalline silicones;   

DOI  :  10.3390/app9030434

来源: DOAJ

【 摘 要 】

In this work, we report the nonlinear carriers’ transport in n-doped monocrystalline silicone with millimeter-scale length. Ohm, effective trap filling, and Mott⁻Gurney regimes are distinguished from the current⁻voltage (I⁻V) curve. Two critical voltages are identified for the lower and upper limitations of an effective trap-filling regime. Meanwhile, the electrode spacing, temperature, and magnetic field dependence of the two critical voltages are demonstrated experimentally. In particular, we propose that the effective trap-filling process is irreversible under electric field. It is observed that the hysteresis of I⁻V curve initiates from the effective trap-filling regime and extends to the Mott⁻Gurney regime, forming the resistance-switching loop. In addition, the temperature dependence and the magnetic field dependence of the resistance-switching loop are reported. The above observations may shed light on dopants engineering on carrier dynamics in a space charge regime and further advance resistance-switching devices technology.

【 授权许可】

Unknown