Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

Nature Communications

Di Wu¹  Hsin Lin¹  Bahadur Singh¹  Qi Jie Wang²  Xuechao Yu²  Peng Yu³  Qingsheng Zeng³  Zheng Liu³  Kazu Suenaga⁴  Junhao Lin⁴  Wu Zhou⁵ 

[1] Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore;Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics Institute, Nanyang Technological University;Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University;National Institute of Advanced Industrial Science and Technology (AIST);School of Physics Science, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences;

DOI  :  10.1038/s41467-018-03935-0

来源: DOAJ

【 摘 要 】

The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.

【 授权许可】

Unknown