Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

IEEE Access

Lin Li¹  Zaijin Li¹  Yi Qu¹  Zhongliang Qiao¹  Zhibin Zhao¹  Baoxue Bo²  Xin Gao²  Jia Xubrian Sia³  Wanjun Wang³  Xiang Li³  Chongyang Liu³  Hong Wang³ 

[1] Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou, China;National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, China;School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore;

关键词: Semiconductor lasers;    quantum well lasers;    quantum wells;    laser modes;   

DOI  :  10.1109/ACCESS.2021.3051179

来源: DOAJ

【 摘 要 】

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 μm is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (T₀) of the laser and the influences of absorber bias voltage on T₀ have been systematically investigated. From our findings, T₀ shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.

【 授权许可】

Unknown