Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers

Crystals

Stacia Keller¹  Hongjian Li²  Matthew S. Wong²  Michael Iza²  Ryan C. White²  Steven P. DenBaars²  Shuji Nakamura²  Michel Khoury²  Cheyenne Lynsky²  David Sotta³ 

[1] Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA;Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USA;Soitec S.A., F-38190 Bernin, France;

关键词: MOCVD;    leakage;    long-wavelength;    microLED;    relaxed;    device;   

DOI  :  10.3390/cryst11101168

来源: DOAJ

【 摘 要 】

We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing a periodic InGaN base layer structure with high temperature (HT) GaN interlayers on these semi-relaxed substrates, we demonstrate robust $\mu$LED devices. A broad range of emission wavelengths ranging from cyan to deep red are realized, leveraging the indium incorporation benefit of the relaxed InGaN substrate with an enlarged lattice parameter. Since a broad range of emission wavelengths can be realized, this base layer scheme allows the tailoring of the emission wavelength to a particular application, including the possibility for nitride LEDs to emit over the entire visible light spectrum. The range of emission possibilities from blue to red makes the relaxed substrate and periodic base layer scheme an attractive platform to unify the visible emission spectra under one singular material system using III-Nitride MOCVD.

【 授权许可】

Unknown