Nanotwinning: Generation, properties, and application

Materials & Design

Akash Deep¹  Ki-Hun Kim²  Prateek Uttam³  Vanish Kumar⁴ 

[1] Environmental Engineering, Hanyang University, 22 Wangsimni-ro, Seoul 04763, Republic of Korea;;Department of Civil &Department of Nanoscience and Materials, Central University of Jammu, Jammu 181143, India;National Agri-Food Biotechnology Institute (NABI), S.A.S. Nagar, Punjab 140306, India;

关键词: Nanotwinned;    Grain boundaries;    Interfaces;    Stacking faults;    Twin boundaries;   

DOI  :  

来源: DOAJ

【 摘 要 】

In recent years, nanotwinned (NT) materials have attracted great attention in several research areas because of many advantageous properties (e.g., high conductivity, excellent mechanical stability, and distinctive structure). This article explains the twin defects in the nano-regime based on an understanding of the origin and effects of twinning through modelling, experiments, or both. The latest research in twinning provides us an overview of new metallic and semiconductor materials based on a better understanding of changes in material properties (like electrical, mechanical, optical, and magnetic properties). It is important to understand how defects and impurities change the characteristics of the materials, as it may be unrealistic to manufacture materials completely free of defects or impurities. Therefore, the types of impurities (defects) in the specific application should be defined or differentiated whether they are desirable or not. The issues related to nanotwinnng defects have been helpful in understanding the current characterization tools that are capable of identifying and detecting defects in different forms of materials. Despite the potential applicability of NT materials, the impact of NT structures on material properties are still in the early stages of research. Thus, further research is needed to stimulate the development of this innovative technology.

【 授权许可】

Unknown