Electrical characterization of single nanometer-wide Si fins in dense arrays

Beilstein Journal of Nanotechnology

Peter F. Nielsen¹  Lior Shiv¹  Henrik H. Henrichsen¹  Ole Hansen²  Dirch H. Petersen²  Andreas Schulze³  Janusz Bogdanowicz³  Paola Favia³  Wilfried Vandervorst³  Steven Folkersma³ 

[1] CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, Denmark;Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech Building 345 East, DK-2800 Kgs. Lyngby, Denmark;IMEC, Kapeldreef 75, B-3000 Leuven, Belgium;

关键词: critical dimension metrology;    electrical characterization;    finFET;    micro four-point probe;    sheet resistance;   

DOI  :  10.3762/bjnano.9.178

来源: DOAJ

【 摘 要 】

This paper demonstrates the development of a methodology using the micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology.

【 授权许可】

Unknown