Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Crystals

Dries Van Thourhout¹  Robert Langer²  Thomas Hantschel²  Yves Mols²  Marianna Pantouvaki²  Marina Baryshnikova²  Bernardette Kunert²  Reynald Alcotte²  Han Han²  Olivier Richard²  Joris Van Campenhout²  Yoshiyuki Ishii³ 

[1] Department of Information Technology Technologiepark-Zwijnaarde, Ghent University, 15, 9052 Gent, Belgium;Imec, Kapeldreef 75, 3001 Leuven, Belgium;Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa, Japan;

关键词: III-V on silicon;    monolithic III-V integration;    heteroepitaxy;    infrared laser;    MOVPE;    InAs/GaSb heterostructure;   

DOI  :  10.3390/cryst10040330

来源: DOAJ

【 摘 要 】

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

【 授权许可】

Unknown