Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

Applied Sciences

Nikolay Kalanda¹  Eugene Telesh²  Dmitry A. Kiselev³  Tatiana S. Ilina³  Evgenii Artiukh⁴  Gerald Gerlach⁴  Gunnar Suchaneck⁴  Nikolai A. Sobolev⁵ 

[1] Cryogenic Research Division, SSPA “Scientific-Practical Materials Research Centre of NAS of Belarus”, 220072 Minsk, Belarus;Department of Electronic Technology and Engineering, Belarusian State University of Informatics and Radioelectronics, 6 P. Brovky Str., 220013 Minsk, Belarus;Laboratory of Physics of Oxide Ferroelectrics, Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology “MISiS”, 4 Leninskiy Prospekt, 119049 Moscow, Russia;Solid-State Electronics Laboratory, TU Dresden, 01062 Dresden, Germany;i3N and Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal;

关键词: magnetic tunnel junction;    strontium ferromolybdate;    tunnel barrier material;    surface roughness;    interface layers;    tunnel magnetoresistance;   

DOI  :  10.3390/app12052717

来源: DOAJ

【 摘 要 】

Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field.

【 授权许可】

Unknown