Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes

Nanoscale Research Letters

Chi Su¹  Ya-Chin King¹  Chrong-Jung Lin¹  Yi-Pei Tsai¹ 

[1] Institute of Electronics Engineering, National Tsing Hua University;

关键词: Plasma-induced damage;    Advanced FinFET technology;    Back-end of line;    Inter-metal dielectric;   

DOI  :  10.1186/s11671-020-03328-7

来源: DOAJ

【 摘 要 】

Abstract High-density interconnects, enabled by advanced CMOS Cu BEOL technologies, lead to closely placed metals layers. High-aspect ratio metal lines require extensive plasma etching processes, which may cause reliability concerns on inter metal dielectric (IMD) layers. This study presents newly proposed test patterns for evaluating the effect of plasma-induced charging effect on the integrity of IMD between closely placed metal lines. Strong correlations between the plasma charging intensities and damages found in IMD layers are found and analyzed comprehensively.

【 授权许可】

Unknown