Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

Journal of Advanced Dielectrics

Tianxiang Yan¹  Liang Fang¹  Saisai Liu¹  Laijun Liu¹  Xiaojun Sun¹  Jianming Deng¹  Brahim Elouadi² 

[1] Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin 541004, P. R. China;Laboratory of Chemical Analysis Elaboration and Materials, Engineering, (LEACIM), Université de La Rochelle, Avenue Michel Crépeau, 17042 La Rochelle Cedex 01, France;

关键词: CaCu3Ti4O12;    grain boundary;    bulk conduction;    electrochemical techniques;    dispersion;    dielectric properties;   

DOI  :  10.1142/S2010135X16500090

来源: DOAJ

【 摘 要 】

CaCu3Ti4−xYxO12 (0≤x≤0.12) ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The impedance and modulus tests both suggested the existence of two different relaxation behavior, which were attributed to bulk and grain boundary response. In addition, the conductivity and dielectric permittivity showed a step-like behavior under 405K. Meanwhile, frequency independence of dc conduction became dominant when above 405K. In CCTO ceramic, rare earth element Y3+ ions as an acceptor were used to substitute Ti sites, decreasing the concentration of oxygen vacancy around grain-electrode and grain boundary. The reason to the reduction of dielectric behavior in low frequencies range was associated with the Y doping in CCTO ceramic.

【 授权许可】

Unknown