An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

Sensors

Wilfried Uhring¹  Mohammadreza Dolatpoor Lakeh¹  Sven Rink¹  Enagnon Aguénounon¹  Jean-Baptiste Kammerer¹  Jean-Baptiste Schell¹  Andreia Cathelin²  Dylan Issartel³  Francis Calmon³ 

[1] ICube Research Institute, University of Strasbourg and CNRS, 23 Rue du Loess, CEDEX, 67037 Strasbourg, France;STMicroelectronics, 38920 Crolles, France;Univ Lyon, INSA Lyon, CNRS, INL, UMR5270, 69100 Villeurbanne, France;

关键词: afterpulsing;    avalanche charge;    active quenching;    avalanche detection;    inverter;    body biasing;   

DOI  :  10.3390/s21124014

来源: DOAJ

【 摘 要 】

An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the avalanche is detected very quickly and, consequently, is quenched very fast. The fast quenching decreases the avalanche charges, therefore resulting in the afterpulsing reduction. Both post-layout and experimental results are presented and are highly in accordance with each other. It is shown that the proposed AQAR circuit is able to detect the avalanche in less than 40 ps and reduce the avalanche charge and the afterpulsing up to 50%.

【 授权许可】

Unknown