Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

Beilstein Journal of Nanotechnology

Oddur Ingólfsson¹  Krishna K Damodaran¹  Ragesh Kumar T P¹  Sangeetha Hari²  Cornelis W. Hagen² 

[1] Department of Chemistry and Science Institute, University of Iceland, Dunhagi 3, 107 Reykjavik, Iceland;Department of ImPhys, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands;

关键词: dichlorosilacyclohexane;    dissociative electron attachment;    dissociative ionization;    electron beam induced deposition;    low-energy electrons;    silacyclohexane;   

DOI  :  10.3762/bjnano.8.237

来源: DOAJ

【 摘 要 】

We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.

【 授权许可】

Unknown