InGaN-LD-Pumped ${\rm Pr}^{3+}$: ${\rm LiYF}_{4}$ Continuous-Wave Laser at 915 nm

IEEE Photonics Journal

Patrice Camy¹  Jean-Louis Doualan¹  Richard Moncorge¹  Huiying Xu²  Yongjie Cheng²  Saiyu Luo²  Zhiping Cai²  Yikun Bu²  Biao Qu²  Bin Xu² 

[1] Centre de Rech. sur les Ions, les Mater. et la Photonique (CIMAP), Univ. de Caen, Caen, France;Dept. of Electron. Eng., Xiamen Univ., Xiamen, China;

关键词: Solid state lasers;    Diode-pumped lasers;    infrared lasers;   

DOI  :  10.1109/JPHOT.2014.2374618

来源: DOAJ

【 摘 要 】

We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr³⁺: LiYF₄ crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are estimated to be about 0.45%, and the M² beam quality factors measured in x and y dimensions are about 1.07 and 1.04, respectively.

【 授权许可】

Unknown