Design and Modelling of Eco-Friendly CH3NH3SnI3-Based Perovskite Solar Cells with Suitable Transport Layers

Energies

M. Mottakin¹  Hend Alkhammash²  Sami Alharthi³  Kuaanan Techato⁴  Md. Shahiduzzaman⁵  Nowshad Amin⁶  K. Sobayel⁷  Md. Akhtaruzzaman⁷  Kamaruzzaman Sopian⁷  Dilip Sarkar⁷ 

[1] Department of Applied Chemistry and Chemical Engineering, Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj 8100, Bangladesh;Department of Electrical Engineering, College of Engineering, Taif University, Taif 21944, Saudi Arabia;Department of Physics, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia;Environmental Assessment and Technology for Hazardous Waste Management Research Centre, Faculty of Environmental Management, Prince of Songkla University, Songkhla 90110, Thailand;Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1292, Japan;Institute of Sustainable Energy, Universiti Tenaga Nasional (The National Energy University), Jalan IKRAM-UNITEN, Kajang 43000, Malaysia;Solar Energy Research Institute, The National University of Malaysia, Bangi 43600, Malaysia;

关键词: CH₃NH₃SnI₃;    CuO;    HTL;    WO₃;    perovskite;    SCAPS-1D;   

DOI  :  10.3390/en14217200

来源: DOAJ

【 摘 要 】

An ideal n-i-p perovskite solar cell employing a Pb free CH₃NH₃SnI₃ absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH₃NH₃SnI₃ absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in V_oc, PCE decreases with temperature. Defect tolerance limit for IL1 is 10¹³ cm⁻³, 10¹⁶ cm⁻³ and 10¹² cm⁻³ for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 10¹⁴ cm⁻³. With the proposed device structure FTO/PCBM/CH₃NH₃SnI₃/CuO shows the maximum efficiency of 25.45% (V_oc = 0.97 V, J_sc = 35.19 mA/cm², FF = 74.38%), for the structure FTO/TiO₂/CH₃NH₃SnI₃/CuO the best PCE is obtained 26.92% (V_oc = 0.99 V, J_sc = 36.81 mA/cm², FF = 73.80%) and device structure of FTO/WO₃/CH₃NH₃SnI₃/CuO gives the maximum efficiency 24.57% (V_oc = 0.90 V, J_sc = 36.73 mA/cm², FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO₂/CH₃NH₃SnI₃/CuO system provides better performance and better defect tolerance capacity.

【 授权许可】

Unknown