Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Xiaodi Jin¹  Paulius Sakalas¹  Michael Schroter²  Yaxin Zhang³  Markus Muller⁴  Anindya Mukherjee⁴ 

[1] Chair for Electron Devices and Integrated Circuits (CEDIC), Technische Universit&x00E4;Infineon Technologies AG, Neubiberg, Germany;MPI Corporation AST Division, Chupei City, Hsinchu, Taiwan;t Dresden, Dresden, Germany;

关键词: Compact modeling;    cryogenic modeling;    cutoff frequency;    heterojunction bipolar transistor (HBT);    HIgh CUrrent Model (HICUM);    quantum computing;   

DOI  :  10.1109/JXCDC.2021.3130041

来源: DOAJ

【 摘 要 】

The dc and ac performance of advanced SiGe:C heterojunction bipolar transistors (HBTs) featuring transit frequency ( $f_{\text {T}}$ ) and maximum oscillation frequency ( $f_{\text {max}}$ ) of 300 and 500 GHz was characterized from 298 K down to 4.3 K. At 4.3 K, the transit frequency $f_{\text {T}}$ increases by 65% from measured 317 GHz (at 298 K) to 525 GHz. The increase of $f_{\text {T}}$ starts to saturate below 73 K. The physical reasons for the temperature variation of the experimental characteristics and simple model extensions for improving existing compact models (CMs) are discussed so that they can be used for estimating circuit design results at cryogenic temperatures (CTs). The model extensions are verified using experimental data. To the best of our knowledge, this is the first demonstration of modeling advanced SiGe:C HBTs for such a wide temperature range from deep cryogenic to room temperature (RT) (4.3–298 K).

【 授权许可】

Unknown