Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

Semiconductor Physics, Quantum Electronics & Optoelectronics

A. Osinsky¹  N. Suhoviy²  N. Lyahova²  I. Masol²  V. Osinsky²  M. Onachenko² 

[1] Agnitron Technology, Eden Prairie, MN, USA;Institute of Microdevices, NAS of Ukraine 3, Pivnichno-Syretska str., 04136 Kyiv, Ukraine;

关键词: III-nitrides;    LED;    solid solutions;    AIIIBV;   

DOI  :  10.15407/spqeo20.02.254

来源: DOAJ

【 摘 要 】

For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AIIIBV direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.

【 授权许可】

Unknown