Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

Nanoscale Research Letters

Zhonghua Ni¹  Yunfei Chen¹  Ke Chen¹  Zhishan Yuan²  Chengyong Wang² 

[1] Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University;School of Electromechanical Engineering, Guangdong University of Technology;

关键词: α-SiNWs;    Cu patterns;    Annealing time;    Resistivity;   

DOI  :  10.1186/s11671-017-2251-1

来源: DOAJ

【 摘 要 】

Abstract In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

【 授权许可】

Unknown