期刊论文详细信息
IEEE Journal of the Electron Devices Society | |
Design and Measurement Requirements for Short Flow Test Arrays to Characterize Emerging Memories | |
Tomasz Brozek1  Dennis Ciplickas1  | |
[1] PDF Solutions Inc., Santa Clara, CA, USA; | |
关键词: Emerging memories; cross-point; memory arrays; cell characterization; parametric test; E-test; | |
DOI : 10.1109/JEDS.2019.2943133 | |
来源: DOAJ |
【 摘 要 】
Emerging non-volatile memories are becoming increasingly attractive for embedded and storage-class applications. Among the development challenges of Back-End integrated memory cells are long learning cycles and high wafer cost. We propose a short-flow based approach for characterization of Memory Arrays using a Cross-Point Array structure and highly parallel Parametric Test. A detailed analysis of design requirements and testability, including inverse circuit simulation, confirms feasibility of the approach to reduce Turn-Around Time and development costs.
【 授权许可】
Unknown