Design and Measurement Requirements for Short Flow Test Arrays to Characterize Emerging Memories

IEEE Journal of the Electron Devices Society

Tomasz Brozek¹  Dennis Ciplickas¹ 

[1] PDF Solutions Inc., Santa Clara, CA, USA;

关键词: Emerging memories;    cross-point;    memory arrays;    cell characterization;    parametric test;    E-test;   

DOI  :  10.1109/JEDS.2019.2943133

来源: DOAJ

【 摘 要 】

Emerging non-volatile memories are becoming increasingly attractive for embedded and storage-class applications. Among the development challenges of Back-End integrated memory cells are long learning cycles and high wafer cost. We propose a short-flow based approach for characterization of Memory Arrays using a Cross-Point Array structure and highly parallel Parametric Test. A detailed analysis of design requirements and testability, including inverse circuit simulation, confirms feasibility of the approach to reduce Turn-Around Time and development costs.

【 授权许可】

Unknown