Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

Nanomaterials

Fabrizio Arciprete¹  Riccardo Plebani¹  Sabrina Calvi¹  Sara De Simone²  Valentina Mussi²  Marco Bertelli²  Adriano Díaz Fattorini²  Raffaella Calarco²  Massimo Longo² 

[1] Department of Physics, University of “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Rome, Italy;Institute for Microelectronics and Microsystems (IMM), Consiglio Nazionale delle Ricerche (CNR), Via del Fosso del Cavaliere 100, 00133 Rome, Italy;

关键词: PCM;    Ge₂Sb₂Te₅;    sputtering;    flexible substrates;    crystallization;    electrical properties;   

DOI  :  10.3390/nano12122001

来源: DOAJ

【 摘 要 】

The morphological, structural, and electrical properties of as-grown and annealed Ge₂Sb₂Te₅ (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electrical characterization. The X-ray diffraction annealing experiments showed the structural transformation of GST layers from the as-grown amorphous state into their crystalline cubic and trigonal phases. The onset of crystallization of the GST films was inferred at about 140 °C. The vibrational properties of the crystalline GST layers were investigated via Raman spectroscopy with mode assignment in agreement with previous works on GST films grown on rigid substrates. The electrical characterization revealed a good homogeneity of the amorphous and crystalline trigonal GST with an electrical resistance contrast of 8 × 10⁶.

【 授权许可】

Unknown