EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki

V. P. Bondarenko¹  V. I. Levchenko²  E. L. Trukhanava²  L. I. Postnova² 

[1] Белорусский государственный университет информатики и радиоэлектроники;ГО «НПЦ НАН Беларуси по материаловедению»;

关键词: эпитаксиальные пленки;    селенид цинка;    пористый кремний;   

DOI  :  

来源: DOAJ

【 摘 要 】

ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning electron microscopy. It was demonstrated the porous buffer layer provides improving the quality of the films compared with films deposited on the monolithic silicon.

【 授权许可】

Unknown