Advances in Electrical and Electronic Engineering | |
Analysis of BDMOS and DTMOS Current Mirrors in 130 nm CMOS Technology | |
Viera Stopjakova1  Matej Rakus1  Daniel Arbet1  | |
[1] Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 81219 Bratislava, Slovak Republic; | |
关键词: analog circuits; bulk-driven; current mirrors; dynamic-threshold; low-voltage circuits.; | |
DOI : 10.15598/aeee.v16i2.2747 | |
来源: DOAJ |
【 摘 要 】
In this paper, an analysis of basic Current Mirror (CM) topologies was performed with a focus on comparison of conventional realization to Bulk-Driven (BD) and Dynamic-Threshold (DT) equivalents, in terms of main properties. These circuits were designed in 130 nm CMOS technology using the supply voltage of 0.6 V and laid out on a test-chip. Fabricated circuits were analyzed and their characteristics compared to the simulation results. The achieved results prove that these unconventional circuit design techniques are quite promising for contemporary ultra low-voltage analog Integrated Circuits (ICs)
【 授权许可】
Unknown