Analysis of BDMOS and DTMOS Current Mirrors in 130 nm CMOS Technology

Advances in Electrical and Electronic Engineering

Viera Stopjakova¹  Matej Rakus¹  Daniel Arbet¹ 

[1] Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 81219 Bratislava, Slovak Republic;

关键词: analog circuits;    bulk-driven;    current mirrors;    dynamic-threshold;    low-voltage circuits.;   

DOI  :  10.15598/aeee.v16i2.2747

来源: DOAJ

【 摘 要 】

In this paper, an analysis of basic Current Mirror (CM) topologies was performed with a focus on comparison of conventional realization to Bulk-Driven (BD) and Dynamic-Threshold (DT) equivalents, in terms of main properties. These circuits were designed in 130 nm CMOS technology using the supply voltage of 0.6 V and laid out on a test-chip. Fabricated circuits were analyzed and their characteristics compared to the simulation results. The achieved results prove that these unconventional circuit design techniques are quite promising for contemporary ultra low-voltage analog Integrated Circuits (ICs)

【 授权许可】

Unknown