Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Frontiers in Chemistry

Heinz Schmid¹  Kirsten Moselund¹  Marilyne Sousa¹  Katarzyna E. Hnida-Gut¹  Steffen Reidt¹  Marinus Hopstaken² 

[1] IBM Research Europe-Zurich, Rüschlikon, Switzerland;IBM T.J. Watson Research Center-Yorktown Heights, New York, NY, United States;

关键词: integration;    InSb;    electrodeposition;    recrystallization;    III-Vs;    TASE;   

DOI  :  10.3389/fchem.2021.810256

来源: DOAJ

【 摘 要 】

High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process.

【 授权许可】

Unknown