Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Crystals

Zhen Zhang¹  Jiaqi Li¹  Junfeng Wang¹  Jiulong Li¹  Wenjia Su¹  Zhicheng Guan¹ 

[1] School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;

关键词: casting silicon;    oxygen and carbon impurities;    numerical simulation;    heat and mass transfer;    solar cells;   

DOI  :  10.3390/cryst12040562

来源: DOAJ

【 摘 要 】

To reduce oxygen and carbon impurities while casting silicon, an argon gas diversion system is proposed. A series of two-dimensional global transient numerical simulations are carried out using Fluent software according to the orthogonal experimental design, including heat transfer, convection of silicon melt and argon gas, and the fully coupling transport of impurities. The numerical results show that when the distance between the outer tube outlet and the cover is 10 mm, the backflow is inhibited by lateral outflow, thus the generation of CO is suppressed and the penetration of impurities into the silicon melt is decreased. The larger the flow rate, the more obvious the effect is. When the outer tube outlet is far from the cover, the effect of removing impurities is no longer significant. In addition, too large or too small an inner tube flow rate is not conducive to impurity reduction. The optimal parameter combination of outer tube flow rate, inner tube flow rate, and the distance between outer tube outlet and the cover are determined by the orthogonal experiment. Compared with the original furnace, the average concentration of oxygen and carbon in casting silicon ingots could be decreased by 7.4% and 59.9%, respectively, by using the optimized argon gas diversion system.

【 授权许可】

Unknown