The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

Open Physics

Ji Zhenguo¹  Wang Chao² 

[1] ;State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou, 310027, P.R. China;

关键词: density functional theory;    doping by iv-family elements;    electronic structure;    electric characteristic;    71.15.mb;    71.55.-i;    71.20.nr;    71.22.+i;    72.20.-i;   

DOI  :  10.2478/s11534-006-0037-7

来源: DOAJ

【 授权许可】

Unknown