MICROSTRUCTURE, PHASE EVOLUTION, AND MICROWAVE DIELECTRIC PROPERTIES OF Li₂O AND Ga₂O₃ DOPED ZINC ORTHOSILICATE

Ceramics-Silikáty

Shin Kim¹  KimYun-Han²  JeongSeong-Min²  ParkHoon²  Sang-Ok Yoon² 

[1] Hasla Co., Ltd, Gangneung 25452, Korea ;;

关键词: Zinc orthosilicate;    Li₂O;    Ga₂O₃;    Liquid phase sintering;    Dielectric constant;    Quality factor;   

DOI  :  10.13168/cs.2017.0018

来源: DOAJ

【 摘 要 】

Microstructure, phase evolution, and microwave dielectric properties of Li₂O and Ga₂O₃ doped zinc orthosilicate having the composition of Zn1.9Si1.05O₄, i.e. the Zn1.9-2xLixGaxSi1.05O₄ system where x=0.02∼0.10, were investigated. LiGaSiO4 and ZnGa₂O4 are observed as the secondary phase. The densification occurred by the liquid phase in the all specimens. The densification curves showed a sigmoidal shape. As the amount of Li₂O and Ga₂O₃ increased, the temperature indicating the maximum value of bulk density in each composition decreased from 1250°C to 1100°C. The value of dielectric constant against the sintering temperature showed a similar tendency as that of the bulk density. The presence of the liquid phase and the insufficient grain growth may cause the deterioration of the quality factor. The dielectric constant and the quality factor of the specimen of x=0.08 sintered at 1100°C were 6.28 and 27,097 GHz, respectively.

【 授权许可】

Unknown