Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons

Semiconductor Physics, Quantum Electronics & Optoelectronics

Yu.V. Pavlovskyy¹  P.G. Litovchenko²  O.V. Konoreva²  V.P. Tartachnyk²  O.I. Kyrylenko³  R.M. Vernydub³  P. Potera⁴  Ya.M. Olikh⁵ 

[1] Drohobych Ivan Franko State Pedagogical University, 24, Ivan Franko str., 82100 Drohobych, Ukraine;Institute for Nuclear Research, NAS of Ukraine, 47, prospect Nauky, 03028 Kyiv, Ukraine;National Pedagogical Dragomanov University, 9, Pyrohova str., 01601 Kyiv, Ukraine;University of Rzeszow, Tadeusz Rejtan 16C Avenue, 35-310 Rzeszow, Poland;V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine;

关键词: gaas1–хpх;    led;    electron irradiation;    defects;    current-voltage characteristics;   

DOI  :  10.15407/spqeo23.02.201

来源: DOAJ

【 摘 要 】

Commercial orange and yellow GaAs1–хPх LEDs were irradiated by 2 MeV electrons with fluences of 1014…2·1016 сm–2, and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown that point radiation defects introduced into GaAs1–хPх diodes reduce the electrical conductivity of the base. The series and parallel resistances of the device increase, compensating the electrical conductivity of the base and reducing the probability of forming the avalanche breakdown channels. Negative differential resistance regions that appear in current-voltage characteristics are the result of the presence of a GaP sublattice in the solid solution. During irradiation, the switching voltage into the low-level state increases due to expansion of junction depleted region. The streamlined currents increase after irradiation is caused by changing in the free path length of charge carriers.

【 授权许可】

Unknown