One-step electrodeposited CuInSe2 absorber layers for efficient PV cells

Revue des Énergies Renouvelables

B.Ndiaye¹  C.Sène¹  M.S.Mane¹  C.Mbow¹ 

[1] Laboratoire des Semi-conducteurs et d’Energie Solaire, ‘LASES’ Département de Physique, Faculté des Sciences et Techniques Université Cheikh Anta Diop, Dakar, Sénégal;

关键词: copper indium selenide;    absorber layers;    electrodeposition;    photovoltaic devices;   

DOI  :  

来源: DOAJ

【 摘 要 】

Thin polycrystalline CuInSe2 (CIS) films for photovoltaic (PV) applications were deposited on molybdenum (Mo)-coated soda lime glass substrates by the one-step electrodeposition process. Films growth was carried out using low concentration aqueous sulfate-based single baths containing dilute CuSO4.5H2O, In2(SO4)3.H2O and SeO2. The electrodeposited CIS layers were studied using SEM, EDS, X-ray diffraction and optical analyses. It was found that film microstructure, composition and morphology strongly depend on the initial concentrations of Cu(II), In(III) and Se(IV) electro-active ionic species in the electrochemical bath. Investigations on the films structure have shown that as-deposited samples are composed of microcrystalline and/or amorphous materials and require recrystallization at high temperature for device processing. Annealing in H2Se atmosphere at 450 °C led to highly crystallized thin films exhibiting the chalcopyrite structure with a pronounced (112) orientation. Optimized processing conditions for high quality thin CIS absorber materials have been established and subsequent photovoltaic (PV) devices exhibited ~ 9% efficiency.

【 授权许可】

Unknown