Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO4) Thin Films

Materials

Woochul Kim¹  Junyoung Lee¹  Sanjith Unithrattil¹  Woojun Seol¹  Shibnath Samanta¹  Gunyoung Jung¹  Dante Ahn¹  Gopinathan Anoop¹  Jiyoung Jo¹ 

[1] School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Korea;

关键词: quinuclidinium perrhenate;    plastic crystals;    molecular ferroelectric crystals;    ferroelectricity;   

DOI  :  10.3390/ma14092126

来源: DOAJ

【 摘 要 】

The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO₄) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO₄ crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO₄ should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO₄ were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO₄ thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices.

【 授权许可】

Unknown