Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal–semiconductor–metal nanostructure

Progress in Natural Science: Materials International

Yanguo Wang¹  Yu Tan² 

[1] Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China;Science College, Hunan Agricultural University, Changsha 410128, China;

关键词: Semiconductor nanowire;    Electrical failure;    Schottky barrier;    Bias polarity;    In situ TEM;   

DOI  :  10.1016/j.pnsc.2014.03.011

来源: DOAJ

【 摘 要 】

The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire (NW) in the metal–semiconductor–metal (M–S–M) nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M–S–M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky barrier. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the cathode-controlled mode due to the high resistance of the depletion region of ZnSe NW at the reversely biased Schottky contact.

【 授权许可】

Unknown