Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas

Nanoscale Research Letters

Lijia Xia¹  Qiao Zheng¹  Shuying Cheng¹  Yunfeng Lai¹  Xiaolin Zeng¹  Yumeng Wang¹  Jinling Yu¹  Yonghai Chen²  Yu Liu² 

[1] Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences;

关键词: Inverse spin Hall effect;    Photo-induced inverse spin Hall current;    Power dependence;    Extrinsic mechanism;    Light profile dependence;   

DOI  :  10.1186/s11671-018-2715-y

来源: DOAJ

【 摘 要 】

Abstract The inverse spin Hall effect induced by circularly polarized light has been observed in a GaAs/AlGaAs two-dimensional electron gas. The spin transverse force has been determined by fitting the photo-induced inverse spin Hall effect (PISHE) current to a theoretical model. The PISHE current is also measured at different light power and different light spot profiles, and all the measurement results are in good agreement with the theoretical calculations. We also measure the PISHE current at different temperatures (i.e., from 77 to 300 K). The temperature dependence of the PISHE current indicates that the extrinsic mechanism plays a dominant role, which is further confirmed by the weak dependence of the PISHE current on the crystal orientation of the sample.

【 授权许可】

Unknown